Microwave

Internally Matched Field Effect Transistor

Elite's main IMFETs are based on GaN technology, already cover from DC to 14GHz, saturated output power of single part from watt to kilowatt; In the meanwhile, we also offer various kinds of pre-matched or unmatched transistors for customer to choose.

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Monolithic Microwave Integrated Circuit

Elite has successfully released various kinds of MMICs, based on GaAs and GaN technology, which cover from L band to W band, to fit most of the application requirements.

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